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BAV19 / BAV20 / BAV21
BAV19 / 20 / 21
DO-35
High Voltage General Purpose Diode
Sourced from Process 1J.
Absolute Maximum Ratings*
Symbol
W IV Working Inverse Voltage
TA = 25C unless otherwise noted
Parameter
BAV19 BAV20 BAV21
Value
100 150 200 200 500 600 1.0 4.0 -65 to +200 175
Units
V V V mA mA mA A A C C
IO IF if if(surge)
Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
Tstg TJ
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
BAV19 / 20 / 21 500 3.33 300
Units
mW mW/C C/W
2000 Fairchild Semiconductor International
BAV19/20/21, Rev. A
BAV19 / BAV20 / BAV21 BAV19 / BAV20 / BAV21
High Voltage General Purpose Diode
(continued)
Electrical Characteristics
Symbol
BV
TA = 25C unless otherwise noted
Parameter
Breakdown Voltage BAV19 BAV20 BAV21 BAV19 BAV20 BAV21
Test Conditions
IR = 100 A IR = 100 A IR = 100 A VR = 100 V VR = 100 V, TA = 150C VR = 150 V VR = 150 V, TA = 150C VR = 200 V VR = 200 V, TA = 150C IF = 100 mA IF = 200 mA VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100
Min
120 200 250
Max
Units
V V V nA A nA A nA A V V pF nS
IR
Reverse Current
VF CO TRR
Forward Voltage Diode Capacitance Reverse Recovery Time
100 100 100 100 100 100 1.0 1.25 5.0 50
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA
VR VR - REVERSE VOLTAGE (V)
REVERSE CURRENT vs REVERSE VOLTAGE IR - 55 to 205 V
IIR - REVERSE CURRENT (nA) R 50 40 30 20 10 0 55 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V)
Ta= 25C
325
Ta= 25C
300
275
3
5
10 20 30 50 I R - REVERSE CURRENT (uA)
100
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
REVERSE CURRENT vs REVERSE VOLTAGE IR - 180 to 255 V
IR IR - REVERSE CURRENT (nA)
FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA
V F V F - FORWARD VOLTAGE (mV)
100 90 80 70 60 50 40 30 20 180 200 220 240 VR - REVERSE VOLTAGE (V) 255
Ta= 25C
450 400 350 300 250 1
Ta= 25C
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature
2
3 5 10 20 30 50 IF - FORWARD CURRENT (uA)
100
BAV19 / BAV20 / BAV21
High Voltage General Purpose Diode
(continued)
Typical Characteristics
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA
V F V F - FORWARD VOLTAGE (mV)
FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA
V VFF - FORWARD VOLTAGE (mV)
725 Ta= 25C 700 650 600 550 500 450 0.1
1.4 1.3 1.2 1.1 1 0.9 0.8
Ta= 25C
0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA)
10
0.7 10
20
30 50 100 200 300 IF - FORWARD CURRENT (mA)
500
800
Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to + 80 Deg C)
VF VF - FORWARD VOLTAGE (mV)
CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V
1.3
Ta= 25C
800
Ta= -40C
CAPACITANCE (pF)
1.2 1.1 1 0.9 0.8
600
Ta= 25C
400
Ta= +80C
200 0.001 0.003 0.01 0.03 0.1 0.3 1 IF F - FORWARD CURRENT (mA) I 3 10
0 2 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15
REVERSE RECOVERY TIME vs REVERSE RECOVERY CURRENT (Irr)
REVERSE RECOVERY (nS) 50 500 I - CURRENT (mA) 400 300 200 100 0
Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (T A )
IR -F OR WA RD
40
CU RR EN TS
30
IF = IR = 30 mA Rloop = 100 Ohms
Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA
TE AD
20
1
1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA)
3
0
50 100 150 o TA - AMBIENT TEMPERATURE ( C)
BAV19 / BAV20 / BAV21
High Voltage General Purpose Diode
(continued)
Typical Characteristics
(continued)
POWER DERATING CURVE
500 PD - POWER DISSIPATION (mW)
400
DO-35 Pkg
300 SOT-23 Pkg
200
100
0
0
50 100 150 IO - AVERAGE TEMPERATURE ( oC)
200
DO-35 Tape and Reel Data and Package Dimensions
DO-35 Packaging Configuration: Figure 1.0
Soabar Label Corrugated Outer Liner
White (Anode)
Red/Blue (Cathode)
T50R
TNR Options
Kraft Paper Wound Between Layers
DO-35 Packaging Information Table: Figure 2.0
DO-35 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size (inch diameter) Inside Tape Spacing (mm) Int Box Dimension (mm) Max qty per Box Weight per unit (gm)
Weight per Reel/Ammo (kg)
T50R TNR 10,000 13 52 30,000 0.137 2.23
T50A Ammo 5,000 52 50,000 0.137 0.800
Standard (no flow code) Bag 500 -
Soabar Label sample
P.O. No. TYPE REV PKG QTY Q.C. 10,000 IN5225A A2 MARK PART No. EC No. M.O. No. DATE OX5046F035 D9903 BLK-BRN
254x79x794 406x267x184 279x133x108 5,000 0.137 Bulk
MFD. UNDER US PAT 3.025.589 & OTHER US PATS & APPLICATIONS
Note/Comments
DO-35 Reel Dimensions: Figure 3.0
Soabar Label
REEL DIMENSIONS
ITEM DESCRIPTION D1 Reel Diameter Arbor Hole Diameter (Standard) D2 Core Diameter Flange to Flange Inner Width D1 D2 D3 W1 10.375 1.245 3.190 10.625 1.255 3.310 3.400 SYMBOL MINIMUM MAXIMUM
Note: All Dimensions are in inches
W1
D3
September 1999, Rev. A
DO-35 Tape and Ammo Data and Package Dimensions
DO-35 Ammo Packing Configuration: Figure 4.0
Soabar Label (on top of box)
254mm x 79mm x 79mm Intermediate Container (5,000 cap)
T50A Option
DO-35 Taping Dimension: Figure 5.0
G
H TAPING DIMENSIONS INCH
A 2.520 +0.066/ -0.027 2.0470.027 0.200 0.0157 0.047(max) 0.022(max) 0.027(max) 0.126(min) 0 0.027
MM
64.00 +1.69/ -0.69 52 0.69 5.08 0.40 1.2(max) 0.55(max) 0.69 3.2(min) 0 0.69
MILS
2519 +66.5/ -27.0 204727 200 15.7 47(max) 22(max) 27 126(min) 0 27
NOTES
Overall width
L1 F B A
B C D E
Inside Tape Spacing Component Pitch Component Misalignment Tape Mismatch Units in line w/ one another Lead amount between tapes Lead amount beyond tapes Delta between two leads
L2
F G H
E C D
L1-L2
DO-35 Bulk Packing Configuration: Figure 6.0
102mm x 76mm x 127mm Immediate Box (1,000 cap) 133mm x 95mm Anti-static bag (500/bag)
September 1999, Rev. A
DO-35 Tape and Reel Data and Package Dimensions, continued
DO-35 (FS PKG Code D2)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in millimeters
Part Weight per unit (gram): 0.137
March 2000, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R)
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R)
QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. F1

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